?2002 fairchild semiconductor corporation rev. a2, september 2002 ksc2756 npn epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted h fe classification symbol parameter value units v cbo collector-base voltage 30 v v ceo collector-emitter voltage 20 v v ebo emitter-base voltage 4 v i c collector current 30 ma p c collector power dissipation 150 mw t j junction temperature 150 c t stg storage temperature -55 ~ +150 c symbol parameter test condition min. typ. max. units i cbo collector cut-off current v cb =20v, i e =0 0.1 a h fe dc current gain v ce =10v, i c =5ma 60 120 240 v ce (sat) collector-emitter saturation voltage i c =10ma, i b =1ma 0.5 v f t current gain bandwidth product v ce =10v, i c =5ma 500 850 mhz c re reverse transfer capacitance v cb =10v, i e =0, f=1mhz 0.35 0.5 pf g ce conversion gain v ce =10v, i c =3ma f rf =200mhz, f if =58mhz 15 23 db nf noise figure v ce =10v, i c =3ma f rf =200mhz, f if =58mhz 6.5 db classification r o y h fe 60 ~ 120 90 ~ 180 120 ~ 240 1. base 2. emitter 3. collector ksc2756 mixer for vhf tv tuner ? high conversion gain : g ce = 23db (typ.) h2o marking h fe grade 1 2 3 sot-23
?2002 fairchild semiconductor corporation ksc2756 rev. a2, september 2002 typical characteristics figure 1. static charateristics figure 2. dc current gain figure 3. saturation voltage figure 4. f t - i c figure 5. cre - v cb figure 6. power derating 048121620 0 2 4 6 8 10 i b = 90 a i b = 20 a i b = 80 a i b = 70 a i b = 60 a i b = 50 a i b = 40 a i b = 30 a i b = 10 a i c [ma], collector current v ce [v], collector-emitter voltage 0.1 1 10 100 1 10 100 1000 v ce = 10v h fe , dc current gain i c [ma], collector current 0.1 1 10 100 10 100 1000 10000 i c = 10 i b v be (sat) v ce (sat) v ce (sat)[mv], saturation voltage v be (sat)[mv], saturation voltage i c [ma], collector current 0.1 1 10 100 10 100 1000 10000 v ce = 10 v f t [mhz], current gain bandwidth product i c [ma], collector current 0.1 1 10 100 0.01 0.1 1 10 f = 1 mhz i e = 0 c re [pf], reverse transfer capacitance v cb [v], collector-base voltage 0 25 50 75 100 125 150 175 200 0 50 100 150 200 p c [mw], power dissipation ta[ o c], ambient temperature
?2002 fairchild semiconductor corporation ksc2756 rev. a2, september 2002 typical characteristics (continued) figure 7. yie - f figure 8. yre - f figure 9. figure 10. yoe - f figure 11. nf, g ce - osc level figure 12. conversion gain 0 204060 0 20 40 60 yid=g ie + jb ie v ce =10v 10ma 400mhz 300mhz 200 mhz f = 100 mhz 5ma ic=3ma b ie [ms], susceptance g ie [ms], conductance -0.2 0.0 0.2 0.4 0.6 0.8 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 yre=g re + jb re v ce =10v 10ma 5ma i c =3ma f=100mhz 400mhz 300mhz 200mhz b re [ms], susceptance g re [ms], conductance -50 0 50 100 150 200 250 -150 -120 -90 -60 -30 0 30 yfe=g fe + jb fe v ce =10v 3ma 5ma 200mhz 300mhz 400mhz f=100mhz i c =10ma b fe [ms], susceptance g fe [ms], conductance 0.0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 yoe=g oe + jb oe v ce =10v 10ma 400mhz 300mhz 200mhz f=100mhz 5ma i c =3ma b oe [ms], susceptance g oe [ms], conductance 90 100 110 5 10 15 [dbuv/50ohm], osc l evel nf[db], noise figure 5 10 15 20 25 f rf = 200mhz, 80dbuv/50ohm f local = 258mhz nf gce g ce [db], conversion gain 0510 0 4 8 12 16 20 24 f rf = 200 mhz, 80 dbuv/50ohm f local = 258 mhz, 105 dbuv/50ohm at sg output level gce [db], conversion gain i c [ma], collector current
0.96~1.14 0.12 0.03~0.10 0.38 ref 0.40 0.03 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508ref 0.97ref 1.30 0.10 0.45~0.60 2.40 0.10 +0.05 ?.023 0.20 min 0.40 0.03 sot-23 package dimensions ksc2756 dimensions in millimeters ?2002 fairchild semiconductor corporation rev. a2, september 2002
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